Ürün Özellikleri
| New | |
| STMicroelectronics | |
| YES | |
| 33 | |
| Tetrode Transistor |
Product Descriptions
Features
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Abraa güvenli ticaret sistemlerini kullanarak güvenli ve emniyetli ödemeler
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