SAMSUNG 990 EVO Plus Internal SSD, 2TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S2T0BW

990 EVO Plus Specifications Model Code (Capacity) MZ-V9S2T0BW (2TB) General Features Application Client PCs Form Factor M.2 (2280) Interface PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0 Dimension (WxHxD) 80.15 x 22.15 x 2.38mm Weight Max 9.0g Storage Memory Samsung V-NAND TLC Controller Samsung in-house Controller Cache Memory HMB (Host Memory Buffer) Special Features TRIM Support Supported S.M.A.R.T Support Supported GC (Garbage Collection) Auto Garbage Collection Algorithm Encryption Support AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive) WWN Support Not Supported Device Sleep Mode Support Yes Performance Sequential Read Up to 7,250 MB/s Sequential Write Up to 6,300 MB/s Random Read (4KB, QD32) Up to 1,000,000 IOPS Random Write (4KB, QD32) Up to 1,350,000 IOPS Environment Average Power Consumption Read 4.6W / Write 4.2W Power Consumption (Idle) Typical 60mW for all capacities Power Consumption (Sleep) Typical 5mW for all capacities Allowable Voltage 3.3V ± 5% Reliability (MTBF) 1.5 Million Hours Operating Temperature 0 - 70°C Shock Resistance 1,500 G & 0.5 ms (Half sine)